? semiconductor components industries, llc, 2008 september, 2008 ? rev. 6 1 publication order number: mj11028/d mj11028, MJ11030, mj11032 (npn) mj11029, mj11033 (pnp) high-current complementary silicon power transistors high ? current complementary silicon power transistors are for use as output devices in complementary general purpose amplifier applications. features ? high dc current gain ? h fe = 1000 (min) @ i c = 25 adc h fe = 400 (min) @ i c = 50 adc ? curves to 100 a (pulsed) ? diode protection to rated i c ? monolithic construction with built ? in base ? emitter shunt resistor ? junction temperature to + 200 c ? pb ? free packages are available* maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector ? emitter voltage mj11028/29 MJ11030 mj11032/33 v ceo 60 90 120 vdc collector ? base voltage mj11028/29 MJ11030 mj11032/33 v cbo 60 90 120 vdc emitter ? base voltage v ebo 5.0 vdc collector current ? continuous ? peak (note 1) i c 50 100 adc base current ? continuous i b 2.0 adc total power dissipation @ t c = 25 c derate above 25 c @ t c = 100 c p d 300 1.71 w w/ c operating and storage junction temperature range t j , t stg ? 55 to +200 c thermal characteristics characteristic symbol max unit ???????????? ???????????? ???????????? maximum lead temperature for soldering purposes for 10 seconds ??? ??? ??? ????? ????? ????? ?? ?? ?? c thermal resistance, junction ? to ? case r jc 0.58 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. pulse test: pulse width = 5 s, duty cycle 10%. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to ? 204 (to ? 3) case 197a style 1 50 ampere complementary darlington power transistors 60 ? 120 volts 300 watts marking diagram mj110xx = device code xx = 28, 29, 30, 32, 33 g= pb ? free package a = location code yy = year ww = work week mex = country of orgin http://onsemi.com mj110xxg ayyww mex see detailed ordering and shipping information in the package dimensions section on p age 3 of this data sheet. ordering information collector case base 1 emitter 2 collector case base 1 emitter 2 npn pnp mj11028 mj11029 MJ11030 mj11032 mj11033 2 1
mj11028, MJ11030, mj11032 (npn) http://onsemi.com 2 figure 1. darlington circuit schematic base emitter collector 3.0 k 25 pnp mj11029 mj11033 base emitter collector 3.0 k 25 npn mj11028 MJ11030 mj11032 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 1) mj11028, mj11029 (i c = 1 00 madc, i b = 0) MJ11030 mj11032, mj11033 v (br)ceo 60 90 120 ? ? ? vdc collector ? emitter leakage current (v ce = 60 vdc, r be = 1 k ) mj11028, mj11029 (v ce = 90 vdc, r be = 1 k ) MJ11030 (v ce = 120 vdc, r be = 1 k ) mj11032, mj11033 (v ce = 60 vdc, r be = 1 k , t c = 150 c) mj11028, mj11029 (v ce = 120 vdc, r be = 1 k , t c = 150 c) mj11032, mj11033 i cer ? ? ? ? ? 2 2 2 10 10 madc emitter cutoff current (v be = 5 vdc, i c = 0) i ebo ? 5 madc collector ? emitter leakage current (v ce = 50 vdc, i b = 0) i ceo ? 2 madc on characteristics (note 1) dc current gain (i c = 25 adc, v ce = 5 vdc) (i c = 50 adc, v ce = 5 vdc) h fe 1 k 400 18 k ? ? collector ? emitter saturation voltage (i c = 25 adc, i b = 250 madc) (i c = 50 adc, i b = 500 madc) v ce(sat) ? ? 2.5 3.5 vdc base ? emitter saturation voltage (i c = 25 adc, i b = 200 madc) (i c = 50 adc, i b = 300 madc) v be(sat) ? ? 3.0 4.5 vdc 1. pulse test: pulse width 300 s, duty cycle 2.0%.
mj11028, MJ11030, mj11032 (npn) http://onsemi.com 3 ordering information device package shipping mj11028 to ? 204 100 units / tray mj11028g to ? 204 (pb ? free) mj11029 to ? 204 mj11029g to ? 204 (pb ? free) MJ11030 to ? 204 MJ11030g to ? 204 (pb ? free) mj11032 to ? 204 mj11032g to ? 204 (pb ? free) mj11033 to ? 204 mj11033g to ? 204 (pb ? free) i c , collector current (amp) 100 0.2 figure 2. dc safe operating area v ce , collector-emitter voltage (volts) 0.1 0.5 1 2 5 10 20 50 200 20 10 5 50 2 1 0.5 0.2 bonding wire limited thermally limited @ t c = 25 c second breakdown limited mj11028, 29 mj11032, 33 100 there are two limitations on the power ? handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 200 c; t c is variable depending on conditions. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v ce , collector-emitter voltage (volts) i c , collector current (amp) h fe , dc current gain 100 k i c , collector current (amp) 50 k 20 k 10 k 5 k 2 k 500 figure 3. dc current gain 1 2 5 10 100 20 50 figure 4. ?on? voltage 100 v ce = 5 v t j = 25 c 1 k 200 mj11029, mj11033 pnp mj11028, MJ11030, mj11032 npn 5 4 3 2 1 1 2 5 10 100 20 50 0 3 t j = 25 c i c /i b = 100 v be(sat) 80 s (pulsed) mj11029, mj11033 pnp mj11028, MJ11030, mj11032 npn 80 s (pulsed) v ce(sat)
mj11028, MJ11030, mj11032 (npn) http://onsemi.com 4 package dimensions to ? 204 (to ? 3) case 197a ? 05 issue k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 1.530 ref 38.86 ref b 0.990 1.050 25.15 26.67 c 0.250 0.335 6.35 8.51 d 0.057 0.063 1.45 1.60 e 0.060 0.070 1.53 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n 0.760 0.830 19.31 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k ? t ? seating plane 2 pl d m q m 0.30 (0.012) y m t m y m 0.25 (0.010) t ? q ? ? y ? 2 1 l g b v h u style 1: pin 1. base 2. emitter case: collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mj11028/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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